STF18NM80
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Gate to Source Voltage (Vgs) | 30V |
| Number of Terminations | 3 |
| Drain-source On Resistance-Max | 0.295Ohm |
| ECCN Code | EAR99 |
| Drain to Source Breakdown Voltage | 800V |
| Pulsed Drain Current-Max (IDM) | 68A |
| Avalanche Energy Rating (Eas) | 600 mJ |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Height | 16.4mm |
| Subcategory | FET General Purpose Power |
| Length | 10.4mm |
| Technology | MOSFET (Metal Oxide) |
| Width | 4.6mm |
| Terminal Position | SINGLE |
| Radiation Hardening | No |
| Base Part Number | STF18 |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Pin Count | 3 |
| Lead Free | Lead Free |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 40W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 40W |
| Case Connection | ISOLATED |
| Factory Lead Time | 1 Week |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Mount | Through Hole |
| Rds On (Max) @ Id, Vgs | 295m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2070pF @ 50V |
| Mounting Type | Through Hole |
| Current - Continuous Drain (Id) @ 25°C | 17A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Package / Case | TO-220-3 Full Pack |
| Rise Time | 28ns |
| Number of Pins | 3 |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Transistor Element Material | SILICON |
| Vgs (Max) | ±30V |
| Operating Temperature | 150°C TJ |
| Fall Time (Typ) | 50 ns |
| Packaging | Tube |
| Turn-Off Delay Time | 96 ns |
| Series | MDmesh™ |
| Continuous Drain Current (ID) | 17A |
| JESD-609 Code | e3 |
| Threshold Voltage | 4V |
| Part Status | Active |
| JEDEC-95 Code | TO-220AB |
See Relate Datesheet
