Parameters | |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 34A Tc |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
Rise Time | 13.5ns |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 96 ns |
Continuous Drain Current (ID) | 34A |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | 650V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Weight | 329.988449mg |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | MDmesh™ II Plus |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STF40N |
Number of Channels | 1 |
Power Dissipation-Max | 40W Tc |
Element Configuration | Single |
Turn On Delay Time | 20.5 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 88m Ω @ 17A, 10V |