Parameters | |
---|---|
Case Connection | ISOLATED |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Factory Lead Time | 1 Week |
Rds On (Max) @ Id, Vgs | 1.3 Ω @ 2.8A, 10V |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Vgs(th) (Max) @ Id | 4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 50V |
Mount | Through Hole |
Mounting Type | Through Hole |
Current - Continuous Drain (Id) @ 25°C | 5.4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Package / Case | TO-220-3 Full Pack |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Number of Pins | 3 |
Vgs (Max) | ±30V |
Fall Time (Typ) | 22 ns |
Turn-Off Delay Time | 54 ns |
Transistor Element Material | SILICON |
Continuous Drain Current (ID) | 5.4A |
JEDEC-95 Code | TO-220AB |
Operating Temperature | 150°C TJ |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 650V |
Packaging | Tube |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Series | SuperMESH3™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 1.3Ohm |
Additional Feature | ULTRA LOW-ON RESISTANCE |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STF6N |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 30W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 30W |