Parameters | |
---|---|
Lifecycle Status | NRND (Last Updated: 7 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Series | SuperFREDmesh3™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 1.15Ohm |
Terminal Finish | Matte Tin (Sn) - annealed |
Additional Feature | ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STF7N |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 25W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 25W |
Case Connection | ISOLATED |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.15 Ω @ 3A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 6A Tc |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 19 ns |
Turn-Off Delay Time | 37 ns |
Continuous Drain Current (ID) | 6A |
Threshold Voltage | 3.75V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 6A |
Drain to Source Breakdown Voltage | 525V |
Pulsed Drain Current-Max (IDM) | 24A |
Avalanche Energy Rating (Eas) | 100 mJ |
Height | 16.4mm |
Length | 10.4mm |
Width | 4.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |