STFW38N65M5
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOWATT218FX |
| Number of Pins | 3 |
| Weight | 6.961991g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STFW |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 57W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
| Rise Time | 9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 9 ns |
| Continuous Drain Current (ID) | 30A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain-source On Resistance-Max | 0.095Ohm |
| Drain to Source Breakdown Voltage | 650V |
| Avalanche Energy Rating (Eas) | 660 mJ |
| Height | 26.7mm |
| Length | 15.7mm |
| Width | 5.7mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
