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STGB10M65DF2

STGB10M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGB10M65DF2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 835
  • Description: STGB10M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 115W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGB10
Element Configuration Single
Input Type Standard
Power - Max 115W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 20A
Reverse Recovery Time 96 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.55V
Max Breakdown Voltage 650V
Test Condition 400V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
IGBT Type Trench Field Stop
Gate Charge 28nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 19ns/91ns
Switching Energy 120μJ (on), 270μJ (off)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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