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STGB10NB37LZT4

STGB10NB37LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGB10NB37LZT4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 240
  • Description: STGB10NB37LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature VOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB10
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Case Connection COLLECTOR
Input Type Standard
Transistor Application AUTOMOTIVE IGNITION
Rise Time 340ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 440V
Max Collector Current 20A
Collector Emitter Breakdown Voltage 440V
Max Breakdown Voltage 440V
Turn On Time 860 ns
Test Condition 328V, 10A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A
Turn Off Time-Nom (toff) 17800 ns
Gate Charge 28nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 1.3μs/8μs
Switching Energy 2.4mJ (on), 5mJ (off)
Gate-Emitter Thr Voltage-Max 2.4V
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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