Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Additional Feature | VOLTAGE CLAMPING |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 125W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Current Rating | 20A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STGB10 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 125W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | AUTOMOTIVE IGNITION |
Rise Time | 340ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 440V |
Max Collector Current | 20A |
Collector Emitter Breakdown Voltage | 440V |
Max Breakdown Voltage | 440V |
Turn On Time | 860 ns |
Test Condition | 328V, 10A, 1k Ω, 5V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 4.5V, 10A |
Turn Off Time-Nom (toff) | 17800 ns |
Gate Charge | 28nC |
Current - Collector Pulsed (Icm) | 40A |
Td (on/off) @ 25°C | 1.3μs/8μs |
Switching Energy | 2.4mJ (on), 5mJ (off) |
Gate-Emitter Thr Voltage-Max | 2.4V |
Height | 4.6mm |
Length | 10.4mm |
Width | 9.35mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |