Parameters |
Factory Lead Time |
1 Week |
Lifecycle Status |
ACTIVE (Last Updated: 8 months ago) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins |
3 |
Weight |
2.240009g |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
Automotive, AEC-Q101, PowerMESH™ |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) - annealed |
Subcategory |
Insulated Gate BIP Transistors |
Voltage - Rated DC |
18V |
Max Power Dissipation |
150W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
245 |
Current Rating |
20A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
STGB10 |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Element Configuration |
Single |
Power Dissipation |
150W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
AUTOMOTIVE IGNITION |
Rise Time |
270ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
20A |
Collector Emitter Breakdown Voltage |
440V |
Collector Emitter Saturation Voltage |
1.2V |
Max Breakdown Voltage |
440V |
Turn On Time |
1570 ns |
Test Condition |
328V, 10A, 1k Ω, 5V |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 4.5V, 10A |
Continuous Collector Current |
20A |
Turn Off Time-Nom (toff) |
12000 ns |
Gate Charge |
28nC |
Current - Collector Pulsed (Icm) |
40A |
Td (on/off) @ 25°C |
1.3μs/8μs |
Switching Energy |
2.4mJ (on), 5mJ (off) |
Gate-Emitter Thr Voltage-Max |
2.2V |
Height |
4.6mm |
Length |
10.4mm |
Width |
9.35mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |