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STGB10NB60ST4

STGB10NB60ST4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGB10NB60ST4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 371
  • Description: STGB10NB60ST4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Turn Off Time-Nom (toff) 3100 ns
Gate Charge 33nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 700ns/1.2μs
Switching Energy 600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 80W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 10A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB10
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 460ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 29A
Continuous Drain Current (ID) 10A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Max Breakdown Voltage 600V
Turn On Time 1160 ns
Test Condition 480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
See Relate Datesheet

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