Parameters | |
---|---|
Turn Off Time-Nom (toff) | 3100 ns |
Gate Charge | 33nC |
Current - Collector Pulsed (Icm) | 80A |
Td (on/off) @ 25°C | 700ns/1.2μs |
Switching Energy | 600μJ (on), 5mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 80W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Current Rating | 10A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STGB10 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 80W |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Rise Time | 460ns |
Drain to Source Voltage (Vdss) | 600V |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 29A |
Continuous Drain Current (ID) | 10A |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.7V |
Max Breakdown Voltage | 600V |
Turn On Time | 1160 ns |
Test Condition | 480V, 10A, 1k Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.75V @ 15V, 10A |