STGB10NC60KT4
| Parameters | |
|---|---|
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Additional Feature | ULTRA FAST |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 65W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Current Rating | 10A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STGB10 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Input Type | Standard |
| Turn On Delay Time | 17 ns |
| Power - Max | 65W |
| Transistor Application | POWER CONTROL |
| Rise Time | 6ns |
| Drain to Source Voltage (Vdss) | 600V |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 72 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 20A |
| Continuous Drain Current (ID) | 10A |
| Collector Emitter Breakdown Voltage | 600V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 23 ns |
| Test Condition | 390V, 5A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 5A |
| Turn Off Time-Nom (toff) | 242 ns |
| Gate Charge | 19nC |
| Current - Collector Pulsed (Icm) | 30A |
| Td (on/off) @ 25°C | 17ns/72ns |
| Switching Energy | 55μJ (on), 85μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
See Relate Datesheet
