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STGB14NC60KT4

IGBT 600V 25A 80W D2PAK


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGB14NC60KT4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 173
  • Description: IGBT 600V 25A 80W D2PAK (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 80W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 14A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB14
Pin Count 3
JESD-30 Code R-PDSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Input Type Standard
Turn On Delay Time 22.5 ns
Transistor Application POWER CONTROL
Rise Time 8.5ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 116 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 25A
Continuous Drain Current (ID) 25A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Max Breakdown Voltage 600V
Turn On Time 31.5 ns
Test Condition 390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Turn Off Time-Nom (toff) 340 ns
Gate Charge 34.4nC
Td (on/off) @ 25°C 22.5ns/116ns
Switching Energy 82μJ (on), 155μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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