STGB20H60DF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 167W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STGB20 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 167W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 40A |
| Reverse Recovery Time | 90 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Max Breakdown Voltage | 600V |
| Test Condition | 400V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| IGBT Type | Trench Field Stop |
| Gate Charge | 115nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 42.5ns/177ns |
| Switching Energy | 209μJ (on), 261μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Height | 4.6mm |
| Length | 10.4mm |
| Width | 9.35mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
