STGB20NB32LZ
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 2V |
| Max Power Dissipation | 150W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Current Rating | 20A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STGB20 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 150W |
| Transistor Application | AUTOMOTIVE IGNITION |
| Rise Time | 600ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 40A |
| Collector Emitter Breakdown Voltage | 375V |
| Turn On Time | 2900 ns |
| Test Condition | 250V, 20A, 1k Ω, 4.5V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 4.5V, 20A |
| Turn Off Time-Nom (toff) | 15900 ns |
| Gate Charge | 51nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 2.3μs/11.5μs |
| Switching Energy | 11.8mJ (off) |
| Gate-Emitter Thr Voltage-Max | 2V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
