Parameters | |
---|---|
Series | PowerMESH™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | ESD PROTECTED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 200W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STGB20 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 200W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 375V |
Max Collector Current | 40A |
Collector Emitter Breakdown Voltage | 425V |
Turn On Time | 2900 ns |
Test Condition | 250V, 20A, 1k Ω, 4.5V |
Vce(on) (Max) @ Vge, Ic | 2V @ 4.5V, 20A |
Turn Off Time-Nom (toff) | 15000 ns |
Gate Charge | 51nC |
Current - Collector Pulsed (Icm) | 80A |
Td (on/off) @ 25°C | 2.3μs/2μs |
Switching Energy | 11.8mJ (off) |
Gate-Emitter Thr Voltage-Max | 2V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |