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STGB30H60DF

STGB30H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGB30H60DF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 671
  • Description: STGB30H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Cut Tape (CT)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 260W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGB30
Element Configuration Single
Input Type Standard
Power - Max 260W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 60A
Reverse Recovery Time 110 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 105nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 50ns/160ns
Switching Energy 350μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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