Parameters | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2V |
Max Collector Current | 60A |
Collector Emitter Breakdown Voltage | 600V |
Max Breakdown Voltage | 600V |
Test Condition | 400V, 30A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
IGBT Type | Trench Field Stop |
Gate Charge | 149nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | -/146ns |
Switching Energy | 393μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 7V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 260W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STGB30 |
Input Type | Standard |
Power - Max | 260W |