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STGB35N35LZT4

STGB35N35LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGB35N35LZT4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 609
  • Description: STGB35N35LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature VOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 176W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Base Part Number STGB35
Pin Count 3
JESD-30 Code R-PDSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 176W
Case Connection COLLECTOR
Input Type Logic
Turn On Delay Time 1.1 μs
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 28 μs
Collector Emitter Voltage (VCEO) 380V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 345V
Collector Emitter Saturation Voltage 1.15V
Max Breakdown Voltage 345V
Turn On Time 7600 ns
Test Condition 300V, 15A, 5V
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 15A
Turn Off Time-Nom (toff) 37000 ns
Gate Charge 49nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 1.1μs/26.5μs
Gate-Emitter Voltage-Max 12V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
See Relate Datesheet

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