Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerMESH™ |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | TIN LEAD |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 68W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 3A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STGB3 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 68W |
Input Type | Standard |
Transistor Application | MOTOR CONTROL |
Rise Time | 60ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.4V |
Max Collector Current | 6A |
Reverse Recovery Time | 45ns |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.4V |
Max Breakdown Voltage | 600V |
Turn On Time | 16.5 ns |
Test Condition | 480V, 3A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 3A |
Turn Off Time-Nom (toff) | 535 ns |
Gate Charge | 16nC |
Current - Collector Pulsed (Icm) | 24A |
Td (on/off) @ 25°C | 12.5ns/105ns |
Switching Energy | 125μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | Non-RoHS Compliant |