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STGB3NB60FDT4

STGB3NB60FDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGB3NB60FDT4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 347
  • Description: STGB3NB60FDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 68W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGB3
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 68W
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 60ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 6A
Reverse Recovery Time 45ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Max Breakdown Voltage 600V
Turn On Time 16.5 ns
Test Condition 480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
Turn Off Time-Nom (toff) 535 ns
Gate Charge 16nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 12.5ns/105ns
Switching Energy 125μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status Non-RoHS Compliant
See Relate Datesheet

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