Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 56W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Current Rating | 15A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STGB6 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 80W |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 15A |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.7V |
Max Breakdown Voltage | 600V |
Turn On Time | 17.3 ns |
Test Condition | 390V, 3A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 3A |
Turn Off Time-Nom (toff) | 222 ns |
Gate Charge | 13.6nC |
Current - Collector Pulsed (Icm) | 21A |
Td (on/off) @ 25°C | 12ns/76ns |
Switching Energy | 20μJ (on), 68μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.75V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |