Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Additional Feature | VOLTAGE CLAMPING |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 100W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STGB7 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 70W |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 100W |
Transistor Application | AUTOMOTIVE IGNITION |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.9V |
Max Collector Current | 14A |
Collector Emitter Breakdown Voltage | 430V |
Collector Emitter Saturation Voltage | 1.5V |
Turn On Time | 5400 ns |
Test Condition | 300V, 46 Ω, 5V |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 5V, 14A |
Turn Off Time-Nom (toff) | 8000 ns |
Gate Charge | 22nC |
Td (on/off) @ 25°C | 900ns/4.4μs |
Gate-Emitter Voltage-Max | 12V |
Gate-Emitter Thr Voltage-Max | 2.2V |
RoHS Status | ROHS3 Compliant |