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STGD10NC60KT4

STGD10NC60KT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGD10NC60KT4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 546
  • Description: STGD10NC60KT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 350.003213mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 60W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGD10
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Collector Emitter Breakdown Voltage 600V
Turn On Time 23 ns
Test Condition 390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Turn Off Time-Nom (toff) 242 ns
Gate Charge 19nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 17ns/72ns
Switching Energy 55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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