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STGD14NC60KT4

IGBT 600V 25A 80W DPAK


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGD14NC60KT4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 552
  • Description: IGBT 600V 25A 80W DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 6 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 80W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 14A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGD14
Pin Count 3
JESD-30 Code R-PDSO-G2
Number of Elements 1
Element Configuration Single
Input Type Standard
Turn On Delay Time 22.5 ns
Power - Max 80W
Transistor Application POWER CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 116 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 25A
Continuous Drain Current (ID) 14A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 31.5 ns
Test Condition 390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Turn Off Time-Nom (toff) 340 ns
Gate Charge 34.4nC
Td (on/off) @ 25°C 22.5ns/116ns
Switching Energy 82μJ (on), 155μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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