Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | VOLTAGE CLAMPING |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 125W |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STGD18 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Logic |
Power - Max | 125W |
Transistor Application | AUTOMOTIVE IGNITION |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 360V |
Max Collector Current | 25A |
Collector Emitter Breakdown Voltage | 420V |
Max Breakdown Voltage | 420V |
Turn On Time | 4450 ns |
Test Condition | 300V, 10A, 5V |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 4.5V, 10A |
Turn Off Time-Nom (toff) | 22200 ns |
Gate Charge | 29nC |
Current - Collector Pulsed (Icm) | 40A |
Td (on/off) @ 25°C | 650ns/13.5μs |
Gate-Emitter Voltage-Max | 16V |
RoHS Status | ROHS3 Compliant |