STGD3NB60SDT4
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 48W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STGD3 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 48W |
| Input Type | Standard |
| Turn On Delay Time | 125 μs |
| Transistor Application | POWER CONTROL |
| Rise Time | 150μs |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 1 μs |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 6A |
| Reverse Recovery Time | 1.7μs |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 275 ns |
| Test Condition | 480V, 3A, 1k Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 3A |
| Turn Off Time-Nom (toff) | 4800 ns |
| Gate Charge | 18nC |
| Current - Collector Pulsed (Icm) | 25A |
| Td (on/off) @ 25°C | 125μs/- |
| Switching Energy | 1.15mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 4.5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
