Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 75W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 5A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STGD5 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 55W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 690 ns |
Power - Max | 75W |
Transistor Application | POWER CONTROL |
Rise Time | 170ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 12.1 μs |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 10A |
JEDEC-95 Code | TO-252AA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 2V |
Max Breakdown Voltage | 1.2kV |
Turn On Time | 850 ns |
Test Condition | 960V, 5A, 1k Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 5A |
Continuous Collector Current | 5A |
Turn Off Time-Nom (toff) | 14100 ns |
Td (on/off) @ 25°C | 690ns/12.1μs |
Switching Energy | 2.59mJ (on), 9mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Height | 2.4mm |
Length | 6.6mm |
Width | 6.2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |