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STGD6NC60HDT4

IGBT 600V 15A 56W DPAK


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGD6NC60HDT4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 846
  • Description: IGBT 600V 15A 56W DPAK (Kg)

Details

Tags

Parameters
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Max Breakdown Voltage 600V
Turn On Time 17.3 ns
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A
Continuous Collector Current 6A
Turn Off Time-Nom (toff) 222 ns
Gate Charge 13.6nC
Current - Collector Pulsed (Icm) 21A
Td (on/off) @ 25°C 12ns/76ns
Switching Energy 20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 350.003213mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 56W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGD6
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 50W
Input Type Standard
Turn On Delay Time 12 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 40 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 15A
Reverse Recovery Time 21 ns
JEDEC-95 Code TO-252AA
See Relate Datesheet

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