Parameters | |
---|---|
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Turn On Time | 10.5 ns |
Transistor Element Material | SILICON |
Test Condition | 390V, 3A, 10 Ω, 15V |
Operating Temperature | -55°C~150°C TJ |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 3A |
Packaging | Tape & Reel (TR) |
Turn Off Time-Nom (toff) | 122 ns |
Series | PowerMESH™ |
Gate Charge | 12nC |
Part Status | Obsolete |
Current - Collector Pulsed (Icm) | 18A |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Td (on/off) @ 25°C | 6.7ns/46ns |
Number of Terminations | 2 |
Switching Energy | 32μJ (on), 24μJ (off) |
Gate-Emitter Voltage-Max | 20V |
ECCN Code | EAR99 |
Gate-Emitter Thr Voltage-Max | 5.75V |
Subcategory | Insulated Gate BIP Transistors |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Max Power Dissipation | 50W |
Lead Free | Lead Free |
Terminal Form | GULL WING |
Base Part Number | STGDL6 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Turn On Delay Time | 6.7 ns |
Power - Max | 50W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 67 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 13A |
Reverse Recovery Time | 23 ns |
Mount | Surface Mount |
Collector Emitter Breakdown Voltage | 600V |
Mounting Type | Surface Mount |
Max Breakdown Voltage | 600V |