Parameters | |
---|---|
Power - Max | 50W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 13A |
Reverse Recovery Time | 30 ns |
JEDEC-95 Code | TO-252AA |
Collector Emitter Breakdown Voltage | 600V |
Max Breakdown Voltage | 600V |
Turn On Time | 10.5 ns |
Test Condition | 390V, 3A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 3A |
Turn Off Time-Nom (toff) | 122 ns |
Gate Charge | 12nC |
Current - Collector Pulsed (Icm) | 25A |
Td (on/off) @ 25°C | 6.7ns/46ns |
Switching Energy | 46.5μJ (on), 23.5μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.75V |
RoHS Status | ROHS3 Compliant |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 50W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STGDL6 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |