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STGDL6NC60DT4

IGBT 600V 13A 50W DPAK


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGDL6NC60DT4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: -
  • Stock: 451
  • Description: IGBT 600V 13A 50W DPAK (Kg)

Details

Tags

Parameters
Power - Max 50W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 13A
Reverse Recovery Time 30 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 10.5 ns
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A
Turn Off Time-Nom (toff) 122 ns
Gate Charge 12nC
Current - Collector Pulsed (Icm) 25A
Td (on/off) @ 25°C 6.7ns/46ns
Switching Energy 46.5μJ (on), 23.5μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 50W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGDL6
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
See Relate Datesheet

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