banner_page

STGF19NC60KD

STGF19NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGF19NC60KD
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 379
  • Description: STGF19NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 32W
Base Part Number STGF19
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 32W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 16A
Reverse Recovery Time 31 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 38 ns
Test Condition 480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A
Turn Off Time-Nom (toff) 270 ns
Gate Charge 55nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 30ns/105ns
Switching Energy 165μJ (on), 255μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good