Parameters | |
---|---|
Gate-Emitter Thr Voltage-Max | 5.75V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Weight | 2.299997g |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 40W |
Base Part Number | STGF35 |
Element Configuration | Single |
Input Type | Standard |
Turn On Delay Time | 30 ns |
Power - Max | 40W |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 225 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 19A |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.5V |
Test Condition | 400V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
Gate Charge | 140nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | 30ns/175ns |
Switching Energy | 290μJ (on), 185μJ (off) |
Gate-Emitter Voltage-Max | 20V |