STGFW30NC60V
| Parameters | |
|---|---|
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 36A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Test Condition | 390V, 20A, 3.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Gate Charge | 100nC |
| Current - Collector Pulsed (Icm) | 100A |
| Td (on/off) @ 25°C | 31ns/100ns |
| Switching Energy | 220μJ (on), 330μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 80W |
| Base Part Number | STGFW30 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 80W |
See Relate Datesheet
