Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | STripFET™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 250W |
Base Part Number | STGP100 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 250W |
Transistor Application | GENERAL PURPOSE SWITCHING |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 330V |
Max Collector Current | 90A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 330V |
Test Condition | 180V, 25A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
Turn Off Time-Nom (toff) | 310 ns |
Td (on/off) @ 25°C | -/134ns |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |