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STGP10NB37LZ

STGP10NB37LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGP10NB37LZ
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 625
  • Description: STGP10NB37LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -65°C~175°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature VOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Current Rating 20A
Base Part Number STGP10
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Input Type Standard
Turn On Delay Time 1.3 μs
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 9.2 μs
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 20A
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 440V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 860 ns
Test Condition 328V, 10A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A
Turn Off Time-Nom (toff) 17800 ns
Gate Charge 28nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 1.3μs/8μs
Switching Energy 2.4mJ (on), 5mJ (off)
Gate-Emitter Thr Voltage-Max 2.4V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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