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STGP10NC60H

IGBT 600V 20A 60W TO220


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGP10NC60H
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 144
  • Description: IGBT 600V 20A 60W TO220 (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 60W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGP10
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 22 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 19 ns
Test Condition 390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Turn Off Time-Nom (toff) 247 ns
Gate Charge 19.2nC
Td (on/off) @ 25°C 14.2ns/72ns
Switching Energy 31.8μJ (on), 95μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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