STGP18N40LZ
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | VOLTAGE CLAMPING |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 150W |
| Base Part Number | STGP18 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Logic |
| Turn On Delay Time | 650 ns |
| Power - Max | 150W |
| Transistor Application | AUTOMOTIVE IGNITION |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 14.2 μs |
| Collector Emitter Voltage (VCEO) | 360V |
| Max Collector Current | 30A |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 420V |
| Turn On Time | 4450 ns |
| Test Condition | 300V, 10A, 5V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 4.5V, 10A |
| Turn Off Time-Nom (toff) | 22200 ns |
| Gate Charge | 29nC |
| Current - Collector Pulsed (Icm) | 40A |
| Td (on/off) @ 25°C | 650ns/13.5μs |
| Gate-Emitter Voltage-Max | 16V |
| Gate-Emitter Thr Voltage-Max | 2.3V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
