Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | PowerMESH™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 130W |
Base Part Number | STGP19 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 130W |
Input Type | Standard |
Turn On Delay Time | 25 ns |
Transistor Application | POWER CONTROL |
Rise Time | 7ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 97 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 40A |
Reverse Recovery Time | 31ns |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.5V |
Turn On Time | 32 ns |
Test Condition | 390V, 12A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A |
Turn Off Time-Nom (toff) | 272 ns |
Gate Charge | 53nC |
Current - Collector Pulsed (Icm) | 60A |
Td (on/off) @ 25°C | 25ns/97ns |
Switching Energy | 85μJ (on), 189μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.75V |
Height | 15.75mm |
Length | 10.4mm |
Width | 4.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |