Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | PowerMESH™ |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 185W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STGP30 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Turn On Delay Time | 29 ns |
Power - Max | 185W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 120 μs |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 60A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Max Breakdown Voltage | 600V |
Turn On Time | 41 ns |
Test Condition | 480V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
Turn Off Time-Nom (toff) | 290 ns |
Gate Charge | 96nC |
Current - Collector Pulsed (Icm) | 125A |
Td (on/off) @ 25°C | 29ns/120ns |
Switching Energy | 350μJ (on), 435μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |