Parameters | |
---|---|
Turn On Time | 7600 ns |
Test Condition | 300V, 15A, 5V |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 4.5V, 15A |
Turn Off Time-Nom (toff) | 37000 ns |
Gate Charge | 49nC |
Current - Collector Pulsed (Icm) | 80A |
Td (on/off) @ 25°C | 1.1μs/26.5μs |
Gate-Emitter Voltage-Max | 12V |
Gate-Emitter Thr Voltage-Max | 2.3V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Weight | 2.299997g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | VOLTAGE CLAMPING |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 176W |
Base Part Number | STGP35 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Logic |
Turn On Delay Time | 1.1 μs |
Power - Max | 176W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 26.5 μs |
Collector Emitter Voltage (VCEO) | 1.7V |
Max Collector Current | 40A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 345V |
Collector Emitter Saturation Voltage | 1.7V |