banner_page

STGP3NB60FD

STGP3NB60FD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGP3NB60FD
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 582
  • Description: STGP3NB60FD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 68W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGP3
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Input Type Standard
Power - Max 68W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 6A
Reverse Recovery Time 45 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 16.5 ns
Test Condition 480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
Turn Off Time-Nom (toff) 535 ns
Gate Charge 16nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 12.5ns/105ns
Switching Energy 125μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good