Parameters | |
---|---|
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 50W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | 6A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STGP3 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 50W |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Drain to Source Voltage (Vdss) | 600V |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.8V |
Max Collector Current | 10A |
Reverse Recovery Time | 45 ns |
Continuous Drain Current (ID) | 6A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.8V |
Turn On Time | 19 ns |
Test Condition | 480V, 3A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
Turn Off Time-Nom (toff) | 220 ns |
Gate Charge | 14nC |
Current - Collector Pulsed (Icm) | 24A |
Td (on/off) @ 25°C | 14ns/33ns |
Switching Energy | 30μJ (on), 58μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 7V |