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STGW15H120DF2

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STGW15H120DF2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 513
  • Description: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 259W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGW15
Element Configuration Single
Input Type Standard
Power - Max 259W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Reverse Recovery Time 231 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Test Condition 600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 15A
IGBT Type Trench Field Stop
Gate Charge 67nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 23ns/111ns
Switching Energy 380μJ (on), 370μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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