STGW19NC60WD
| Parameters | |
|---|---|
| Element Configuration | Single |
| Power Dissipation | 125W |
| Input Type | Standard |
| Turn On Delay Time | 25 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 7ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 90 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 42A |
| Reverse Recovery Time | 31ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 33 ns |
| Test Condition | 390V, 12A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A |
| Turn Off Time-Nom (toff) | 204 ns |
| Gate Charge | 53nC |
| Td (on/off) @ 25°C | 25ns/90ns |
| Switching Energy | 81μJ (on), 125μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| Height | 20.15mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 125W |
| Base Part Number | STGW19 |
| Pin Count | 3 |
| Number of Elements | 1 |
See Relate Datesheet
