STGW20NB60KD
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 170W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 20A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STGW20 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 170W |
| Input Type | Standard |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 25ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.8V |
| Max Collector Current | 50A |
| Reverse Recovery Time | 80.5 ns |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.8V |
| Turn On Time | 76 ns |
| Test Condition | 480V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 280 ns |
| Gate Charge | 85nC |
| Current - Collector Pulsed (Icm) | 100A |
| Td (on/off) @ 25°C | 39ns/105ns |
| Switching Energy | 675μJ (on), 500μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 7V |
| RoHS Status | ROHS3 Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
See Relate Datesheet
