Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~125°C TJ |
Packaging | Tube |
Series | PowerMESH™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 220W |
Base Part Number | STGW30 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 220W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 60A |
Reverse Recovery Time | 84 ns |
JEDEC-95 Code | TO-247AC |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 57 ns |
Test Condition | 960V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.85V @ 15V, 20A |
Turn Off Time-Nom (toff) | 756 ns |
Gate Charge | 105nC |
Current - Collector Pulsed (Icm) | 100A |
Td (on/off) @ 25°C | 36ns/251ns |
Switching Energy | 2.4mJ (on), 4.3mJ (off) |
Gate-Emitter Voltage-Max | 25V |
Gate-Emitter Thr Voltage-Max | 5.75V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |