STGW30N90D
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 220W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STGW30 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 220W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 900V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 152 ns |
| Collector Emitter Breakdown Voltage | 900V |
| Turn On Time | 41 ns |
| Test Condition | 900V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.75V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 928 ns |
| Gate Charge | 110nC |
| Current - Collector Pulsed (Icm) | 135A |
| Td (on/off) @ 25°C | 29ns/275ns |
| Switching Energy | 1.66mJ (on), 4.44mJ (off) |
| Gate-Emitter Voltage-Max | 25V |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
