STGW30NC60VD
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 250W |
| Base Part Number | STGW30 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250W |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Rise Time | 11ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 80A |
| Reverse Recovery Time | 44ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 42.5 ns |
| Test Condition | 390V, 20A, 3.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 280 ns |
| Gate Charge | 100nC |
| Current - Collector Pulsed (Icm) | 150A |
| Td (on/off) @ 25°C | 31ns/100ns |
| Switching Energy | 220μJ (on), 330μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| Height | 21.07mm |
| Length | 16.02mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
