STGW30V60DF
| Parameters | |
|---|---|
| Switching Energy | 383μJ (on), 233μJ (off) |
| Height | 20.15mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 258W |
| Base Part Number | STGW30 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 258W |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 53 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.35V |
| Turn On Time | 59 ns |
| Test Condition | 400V, 30A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 225 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 163nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 45ns/189ns |
See Relate Datesheet
