Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 200W |
Base Part Number | STGW35 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Turn On Delay Time | 35 ns |
Power - Max | 200W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 175 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 60A |
Reverse Recovery Time | 85 ns |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 45 ns |
Test Condition | 390V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
Turn Off Time-Nom (toff) | 295 ns |
Gate Charge | 140nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | 30ns/175ns |
Switching Energy | 185μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.75V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |