STGW35NB60S
| Parameters | |
|---|---|
| Gate Charge | 83nC |
| Current - Collector Pulsed (Icm) | 250A |
| Td (on/off) @ 25°C | 92ns/1.1μs |
| Switching Energy | 840μJ (on), 7.4mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 200W |
| Base Part Number | STGW35 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 200W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 70A |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 153 ns |
| Test Condition | 480V, 20A, 100 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 3600 ns |
See Relate Datesheet
