Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | PowerMESH™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 250W |
Base Part Number | STGW38 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 250W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 424 ns |
Collector Emitter Voltage (VCEO) | 1.3kV |
Max Collector Current | 63A |
Collector Emitter Breakdown Voltage | 1.3kV |
Voltage - Collector Emitter Breakdown (Max) | 1300V |
Collector Emitter Saturation Voltage | 2.1V |
Test Condition | 960V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 20A |
Continuous Collector Current | 55A |
Turn Off Time-Nom (toff) | 740 ns |
Gate Charge | 127nC |
Current - Collector Pulsed (Icm) | 125A |
Td (on/off) @ 25°C | -/284ns |
Switching Energy | 3.4mJ (off) |
Gate-Emitter Voltage-Max | 25V |
Gate-Emitter Thr Voltage-Max | 5.75V |
Height | 20.15mm |
Length | 15.75mm |
Width | 5.15mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |